Abstract
Antenna-edge microwave plasma chemical vapor deposition was utilized for heteroepitaxial nucleation of diamond on 3C-SiC(001)/Si(001) substrates. A diamond grain density of 3 × 109 cm−2 was obtained after 2 h of growth under the 〈001〉 preferential growth conditions. A two-step growth process led to a highly-oriented diamond films by suppressing the growth of non-aligned grains. Sharply-defined reflection high energy electron diffraction patterns of diamond were observed. The crystalline quality of the diamond films were investigated by X-ray diffraction pole figure analysis and micro-Raman spectroscopy. After 30 h of growth, heteroepitaxial diamond films were obtained with a full width at half-maximum of 3.8° in the X-ray diffraction polar angle and 7 cm−1 in the diamond Raman peak. The surface of diamond films was observed by atomic force microscopy. Flat domain surfaces with a root mean square roughness of 0.45 nm in 1 × 1 µm2 were obtained.
Published Version
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