Abstract
In this letter we report on preliminary results of heteroepitaxial growth of the dilute magnetic semiconductor alloy Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition. Dimethylcadmium (DMCd), diethyltellurium (DETe), and tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) were used as source materials. The TCPMn had to be heated to as high as 140 °C to provide the required vapor pressure. Films with Mn atomic fractions up to 30% have been grown over the temperature range 410–450 °C. Results of optical absorption/transmission, photoluminescence, and x-ray diffraction measurements are presented along with a scanning electron micrograph showing good surface morphology of the grown layers.
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