Heterepitaxial Growth of High Quality Germanium Layer on Si(001)for GOI Fabrication

Abstract

High quality Ge layers on Si(001) have been achieved by two-step heteroepitaxial deposition method using reduced pressure chemical vapor deposition (RPCVD) system. The effect of in-situ hydrogen annealing is investigated. On large Si wafers, the epitaxial Ge layers with TDD less than 1×107cm-2 is obtained. And Raman results indicate that the Ge layers have about 0.17% tensile stress. After successful bonding of the epitaxial Ge layers on Si substrate to a SiO2 wafer, the 6 inch GOI is achieved by Smart-cutTM technology.