Abstract
A series of 300 keV He implantations of Al and SAP 930 have been conducted at temperatures between 150 and 773 K. The He re-emission was monitored during implantation and the samples were examined with a scanning electron microscope after implantation. Both Al and SAP 930 were found to blister after a critical He dose was reached at temperatures above 473 K, both underwent flaking below that temperature, with blistering re-appearing in SAP 930 at an implantation temperature of 150 K. The surface deformation and He re-emission are strongly dependent on microstructural effects in the intermediate temperature regime.
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