Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

Abstract

Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 10 16 to 7 × 10 17 cm -3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 10 16 to 4 × 10 17 cm -3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.