Abstract
AbstractRutile‐ and anatase‐phase Nb‐doped TiO2 (TiO2:Nb) epilayers were selectively grown on a GaN template by the helicon‐wave‐excited‐plasma sputtering epitaxy (HWPSE) method. The rutile (100) TiO2:Nb films grew on the etched clean (0001) GaN surface with the in‐plane epitaxial relationship [010] TiO2 // [10‐10] GaN, regardless of growth temperature. While, the anatase (001) TiO2:Nb films grew on appropriately oxidized (0001) GaN with the in‐plane relations [110] TiO2 // [10‐10] GaN (and [110] TiO2 // [11‐20] GaN) under high temperature and low oxygen partial pressure conditions. The lowest resistivity of the heterostructure was 3×10‐4 Ω·cm. The selective growth of anatase films is assigned as being due to the formation of a sheet of Ga‐O layer, possibly (001) or (100) orientation β‐Ga2O3, on the GaN surface. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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