Abstract
A theoretical and experimental analysis of dispersion, polarization, and size resonance frequency of helicon waves in many-valley semiconductors is made under various assumptions with respect to the structure of the valleys. A new technique to measure carrier concentration, mobility, and coefficient of mobility anisotropy, K, is proposed. The dependence of the dispersion of the helicon waves upon carrier intervalley repopulation in n-Ge subjected to uniaxial compression P at 78 °K is discussed theoretically along with experimental results. The possibility to measure transverse mobility is shown. The dependence of K on P is observed. [Russian Text Ignored]
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