Abstract

The effects of incident energetic particles, and the modification of materials under irradiation, are governed by the mechanisms of energy losses of ions in matter. The complex processes affecting projectiles spanning many orders of magnitude in energy depend on both ion and electron interactions. Developing multi-scale modeling methods that correctly capture the relevant processes is crucial for predicting radiation effects in diverse conditions. In this work, we obtain channeling ion ranges for tungsten, a prototypical heavy ion, by explicitly simulating ion trajectories with a method that takes into account both the nuclear and the electronic stopping power. The electronic stopping power of self-ion irradiated tungsten is obtained from first-principles time-dependent density functional theory (TDDFT). Although the TDDFT calculations predict a lower stopping power than SRIM by a factor of three, our result shows very good agreement in a direct comparison with ion range experiments. These results demonstrate the validity of the TDDFT method for determining electronic energy losses of heavy projectiles, and in turn its viability for the study of radiation damage.

Highlights

  • The ability to accurately predict range profiles of energetic ions in solids is an important aspect of the understanding of radiation effects, relevant to numerous applications in materials modification, including semiconductor processing, energy production,[1] and medicine,[2] as well as for the development of nuclear technology.[3]

  • Electronic stopping power remains significant in this energy range, to a degree that we will quantify in this paper

  • This is especially true in the case of channeling ions, where nuclear stopping is strongly reduced,[7,8] as well as in the quenching stage of heat spikes, that develop from collision cascades in primary radiation damage events.[3,9]

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Summary

Introduction

The ability to accurately predict range profiles of energetic ions in solids is an important aspect of the understanding of radiation effects, relevant to numerous applications in materials modification, including semiconductor processing, energy production,[1] and medicine,[2] as well as for the development of nuclear technology.[3].

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