Abstract

The annealing kinetics of U-238 (15.36 MeV/n) ion produced defects in garnet as a function of both time and temperature are investigated. Two annealing processes one at lower temperature range and the other at higher temperature range are found and described by two empirical relations, based on the extensive experimental annealing data. It is observed that the track etch velocity parameter is more sensitive at lower temperatures while at higher temperatures the track retention rate dominates for the annealing studies. The values of two activation energies corresponding to two annealing stages are determined using empirical relations.

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