Heavy doping effects on bandgaps, effective intrinsic carrier concentrations and carrier mobilities and lifetimes

Abstract

Conventional device physics in most computer models of transistors may not predict correctly the measured electrical performance for shallow, heavily doped transistors. This paper presents improved concepts for numerical simulations of solid-state devices with donor densities up to 3 × 1020 cm−3 and junction depths as small as 1 μm. These improved concepts pertain to bandgap narrowing, effective intrinsic carrier concentrations and carrier mobilities and lifetimes.