Abstract
Heavily Sn-doped In2O3nano-pyramids with a Sn percentage of 19.97% by weight have been prepared by sputtering technique. The nano-pyramids with smooth facets and a sharp tip have been achieved by deposition on Sn-metal particles, leading to a diameter of ∼100nm. The gas sensors realized from these pyramids are highly sensitive to ethanol gas, and the sensitivity is about 133.99 against 200ppm ethanol at 250°C. Good sensitivity characteristics have been obtained even at a low temperature of down to 50°C. The high response and low working temperature demonstrate the potential application of heavily Sn-doped In2O3 nano-pyramids for fabricating gas sensors.
Highlights
Tin-doped indium oxide nano-pyramids as high-performance gas sensor
Gas sensing has received increasing attention in both industry and academia, one of the key components for intelligent systems, which has become significantly important for widespread applications in the fields of automotive industry, medical instrumentation, indoor air quality supervision, and environmental studies.[1]
The constantly evolving market demands driven by low cost, timely and accurate gas sensors have led to massive researches in developing the advanced sensing materials.[2]
Summary
Tin-doped indium oxide nano-pyramids as high-performance gas sensor R. China 3Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom (Received 16 July 2018; accepted 7 November 2018; published online 15 November 2018)
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