Abstract
We study epitaxial growth and physical properties of heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In0.84−x ,Ga x ,Fe0.16)Sb thin films (Ga content x = 2%–10%, Fe content fixed at 16%). The (In0.84−x ,Ga x ,Fe0.16)Sb films have a zinc-blende-type crystal structure without any other second phase, and all the samples exhibit intrinsic ferromagnetism with high Curie temperature (>300 K). The carrier type of the (In0.84−x ,Ga x ,Fe0.16)Sb films is found to change by varying x, and a carrier-type phase diagram of (In,Ga,Fe)Sb is presented. These results suggest that (In,Ga,Fe)Sb is a promising material for semiconductor spintronic devices, such as ferromagnetic p-n junctions, operating at RT.
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