Abstract
Heavily doped and fully compensated Ge single-crystalline thin (∼0.1μm) films were epitaxially grown in vacuum on semi-insulating GaAs substrates. Such films have high resistivity (up to 140Ω∕cm), conductance activation energy as high as half the band gap of Ge, low free charge carrier mobility (∼50cm2∕V⋅s) and concentration (∼1014cm−3). The transport properties of the films were studied and explained involving the theory of two-dimensional potential fluctuations and percolation.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
