Abstract
A basic technique for manufacturing and processing polycrystalline diamond as a promising material for heatsinks of high-power microwave semiconductor devices is proposed. The fabrication of polycrystalline diamond wafers by chemical vapor deposition is investigated. The choice of a method for fragmenting polycrystalline diamond wafers is considered and a new technique for low-pressure laser/plasma chemical cutting of wafers in a gaseous medium is proposed which consists of growing polycrystalline diamond on preshaped silicon substrates and subsequent silicon etching.
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