Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode

I S Shashkin,V A Kryuchkov,N A Rudova,N A Pikhtin,S O Slipchenko,D N Romanovich,A D Rybkin,A E Kazakova

doi:10.3103/s1068335623130122

Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode

I S Shashkin, V A Kryuchkov + Show 6 more

https://doi.org/10.3103/s1068335623130122

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Journal: Bulletin of the Lebedev Physics Institute	Publication Date: Jul 1, 2023
Citations: 1

Affiliation: Ioffe Institute

#Ultra-wide Aperture #Quasi-cw Mode #High-Power Lasers #High-Power Semiconductor Lasers #High-Power Semiconductor #Semiconductor Lasers #Active Region

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Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode

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Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode