Abstract
This study investigates heat dissipation at carbon nanotube (CNT) junctions supported on silicon dioxide substrate using molecular dynamics simulations. The temperature rise in a CNT (∼top CNT) not making direct contact with the oxide substrate but only supported by other CNTs (∼bottom CNT) is observed to be hundreds of degree higher compared with the CNTs well-contacted with the substrate at similar power densities. The analysis of spectral temperature decay of CNT-oxide system shows very fast intratube energy transfer in a CNT from high-frequency band to intermediate-frequency bands. The low frequency phonon band (0–5 THz) of top CNT shows two-stage energy relaxation which results from the efficient coupling of low frequency phonons in the CNT-oxide system and the blocking of direct transport of high- and intermediate-frequency phonons of top CNT to the oxide substrate by bottom CNT.
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