Abstract
Heat and mass transfer processes were studied in a horizontal vapor epitaxy reactor with simultaneously developing velocity, temperature and concentration distributions. The susceptor placed in the reactor was either horizontal or slightly titled. An analytical solution was obtained using previous heat transfer results in entry length and fully developed duct flow, and the heat-mass transfer analogy for growth rate calculations. The mean concentration distributions along the susceptor are presented in dimensionless forms based on constant properties and laminar flow. The influences of axial temperature variation and wall cooling on the epitaxial growth rate distribution are examined in this study. Results of experimental studies of silicon growth from SiH 4 in hydrogen agree well with the analysis.
Published Version
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