Abstract

The damaging of 6HSiC by He + ions with 700 and 1400 keV and doses between 0.5 and 24 × 10 14 ions cm −2 was studied by IR and Raman spectroscopy. Optical modelling of the IR spectra indicates the formation of two layers: a light absorbing surface layer of disturbed crystalline material with a thickness of 1.6 and 3.1 μm, respectively, and an interface layer with a thickness of 0.3 μm and a dose-proportional increase of the refractive index. Raman spectra show a special kind of lattice distortions and decrease of the sharp bands of the crystalline bulk carbide, which is proportional to the ion dose also and is caused by the diminished transparency of the surface layers.

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