Abstract
The possible benefits of H* radicals on dry etching characteristics of AlGaAs were explored using HCl and separately mixed H2 and Cl2 radical-beam ion-beam etching. H* radicals strongly affect the Cl*–AlGaAs surface chemistry resulting in large changes in etch rate and surface morphology. Etch rates were measured in situ by reflectance interferometry using a quarter-wavelength structure with varying AlxGa1−xAs mole fraction. The presence of H* (from HCl or H2 added to Cl2) increases the Cl* etch rate threefold. An increase in surface roughness with H* (compared to Cl* alone) is correlated with increased Al content.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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