Abstract
Gallium arsenide (GaAs) was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaAs obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Ga 2s, Ga 2p3/2, Ga 3s, Ga 3p, Ga 3d, As 2s, As 2p3/2, As 3s, As 3p, and As 3d.
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