Abstract
Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
