Abstract
A model relating the pronounced effect of impurities on the processes of plastic deformation of semiconductor crystals to the dynamic aging of dislocations is proposed. The impurity contribution to the macroscopic flow stress that is established beyond the yield point is calculated by averaging over the ensemble of dislocations of different age. The concentration dependence of the impurity contribution to the hardening of semiconductors is predicted. The theory is illustrated by the experimental data for a GeSi solid solution. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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