Abstract
The electronic structure of polycrystalline Bi2S3 thin films deposited by thermal evaporation under high vacuum conditions was investigated with respect to their potential use as absorber materials in p-i-n solar cells by means of hard x-ray photoemission spectroscopy at the PETRA III synchrotron. A clear influence of the post-deposition treatment on the electronic structure could be observed, resulting in a lowering of the Fermi level as well as in a change of the electronic states in the valence band. Furthermore, chemical shifts of Bi2S3 were determined in the bulk-sensitive hard x-ray regime as ΔEB,Bi=1.35 eV and ΔEB,S=−2.80 eV.
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