Direct observation of pseudo-gap electronic structure in the Heusler-type Fe2VAl thin film

Abstract

We investigated the electronic structure of a thermoelectric material, Heusler-type Fe2VAl thin film, by hard X-ray photoemission spectroscopy and electronic band structure calculation to understand the improvement process of the thermoelectric properties of this material. Electronic structure of the Fe2VAl thin film showed a semi-metallic electronic structure with a pseudo-gap at the Fermi level. The observed electronic structure of the Fe2VAl thin film suggests that an optimal carrier doping exists to best control the n- and p-type thermoelectric properties and enhance the power factors.