Abstract
We use the Hanle effect to study spin relaxation in ZnxCd1−xSe epilayers grown on lattice-matched InP substrates. We study three samples with a fixed composition (x = 0.4) and with varying levels of n-doping, as well as an undoped sample with x = 0.5. Our measurements show that the spin relaxation time changes non-monotonically as a function of carrier density, with a maximum transverse spin lifetime of ~10.5 ns at low temperatures for a sample doped near the metal–insulator transition.
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