Abstract
We report a systematic study of the low-temperature Hall resistance ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{y}}$ in the reentrant insulating phase (IP) around the 1/5 fractional quantum Hall (FQH) liquid. At filling factors \ensuremath{\nu}=1/5 and \ensuremath{\nu}=2/9, ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{y}}$=5h/${\mathit{e}}^{2}$ down to 22 mK and ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{y}}$=9h/2${\mathit{e}}^{2}$ down to 40 mK, respectively. In the reentrant IP for \ensuremath{\nu}>1/5, and for \ensuremath{\nu}1/5 near the 1/5 FQH liquid, ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{y}}$ is normal (=B/ne) and independent of T. Our experimental findings directly imply that ${\mathrm{\ensuremath{\sigma}}}_{\mathit{x}\mathit{x}}$\ensuremath{\rightarrow}0 and ${\mathrm{\ensuremath{\sigma}}}_{\mathit{x}\mathit{y}}$\ensuremath{\rightarrow}0, but ${\mathrm{\ensuremath{\rho}}}_{\mathit{x}\mathit{y}}$\ensuremath{\rightarrow}B/ne as T\ensuremath{\rightarrow}0 in these IP regions. We discuss implications of the findings with regard to the various theoretically proposed ground states for the IP.
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