Abstract
The majority-carrier Hall mobility has been measured in thin, single-crystal silicon films defined by electrochemical etching. Both n-type and p-type films with dopant concentrations of about 10 15 cm −3 were studied. The mobilities observed in p-type thin films and in epitaxial control samples were almost identical while the mobilities measured in n-type films were markedly less than those in epitaxial control samples. This apparent anomaly is attributed to the presence of an n-type surface-charge layer with lower carrier mobility near the bottom of the thin films, although it may possibly be related to voids formed in the n-type films. Measurements on very thin samples indicated that an t-type surface layer is left on the top surface of p-type films immediately after electrochemical etching.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
