Hall mobility and carrier concentration of boron-doped homoepitaxially grown diamond (001) films

Abstract

The Hall mobility and carrier concentration of boron-doped homoepitaxially grown diamond film have been measured by the van der Pauw method. Epitaxial growth of the film has been performed on the polished (001) face of a high pressure synthetic diamond crystal by means of microwave plasma-assisted chemical vapor deposition using a gaseous mixture of hydrogen (H 2), methane (CH 4) and diborane (B 2H 6). The mobility obtained was considerably higher for the films grown at low CH 4 concentrations; the highest mobility was 707 cm 2V −1s −1 which was obtained for the film grown at the CH 4 concentration of 1% in the present work.