Electrical properties of homoepitaxial boron-doped diamond thin films grown by chemical vapor deposition using trimethylboron as dopant

Abstract

Abstract Boron-doped diamond was synthesized homoepitaxially on (100) diamond by microwave plasma-assisted chemical vapor deposition (MPCVD), using methane as the carbon source and trimethylboron as the boron source. The Hall mobility of the boron-doped films increased with increasing total reaction pressure under the conditions employed. The highest mobility at room temperature was achieved at a total pressure of 10.6 kPa and was 750 cm 2 V −1 s −1 at a hole concentration of 4.5×10 14 cm −3 . The values for Hall mobility were comparable to those reported for homoepitaxial (100) diamond films doped with diborane, as well as natural IIb diamond. This suggests that the chemical form of the dopant is not critical in terms of the Hall mobility of diamond films formed by MPCVD.