Abstract
We study the effect of spin-orbit interaction on the electron-transport properties of a cross-junction structure. It results in spin polarization of left and right outgoing electron waves. Consequently, the incoming electron wave of a certain polarization induces a voltage drop perpendicular to the direct current flow between the source and drain of the four-terminal cross structure investigated. The resulting Hall-like resistance is estimated to be of the order of ${10}^{\ensuremath{-}3}--{10}^{\ensuremath{-}2}{h/e}^{2}$ for technologically feasible structures. The effect becomes more pronounced in the vicinity of resonances where the Hall-like resistance changes its sign as a function of the Fermi energy.
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