Abstract
We report, for the first time, temperature-dependent Hall data for holes in modulation-doped In0.2Ga0.8As/GaAs strained-layer superlattices. Samples with (compressive) planar strains of −0.5% to −1.2% in the InGaAs quantum wells were used, providing a range of configurations for the two (overlapping) sets of valence-band quantum wells derived from the bulk heavy- and light-hole bands. All samples exhibit transfer of holes into the InGaAs quantum wells at low temperature; however, the sample with the least strain shows evidence for gradual carrier freeze-out over a wide range of temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
