Abstract
The channel conductance and the Hall voltage in a wide and a long rectangular samples of n -type MOS inversion layers on Si(100) surfaces are measured in a strong magnetic field of 100 kOe at 1.6 K. A method of transformation from the conductance and the Hall voltage data to the transverse conductivity σ x x and the Hall conductivity σ x y in arbitrary magnetic field strength based on the Hall-effect field correction are described. The conductivity σ x x and σ x y are compared with σ x x measured directly in a Corbino disk sample and σ x y predicted by the quantum transport theory and the electron mobility data. Good agreement is obtained only in the wide sample by the use of a modified Hall-effect field correction. Effects of the electrode resistance, the side edges and the sample geometry are discussed in connection to the modification of the Hall-effect field correction.
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