Hall conductivity in n-type silicon inversion layers under strong magnetic fields

Abstract

Quantitative results of the Hall conductivity σ xy as well as the transverse conductivity σ xx in silicon MOS inversion layers have been obtained successfully by use of the Hall current method. Experimental electron mobility dependence of the Landau level width in higher Landau levels are in good agreement with theoretical predictions. The electron localization in strong magnetic fields has been investigated by utilizing σ xy as well as σ xx .