Abstract
The growth of cubic and rhombohedral In2O3 and (InGa)2O3 epitaxial films by halide vapor phase epitaxy (HVPE) is reported. The deposition is carried out at 625 °C using indium trichloride (InCl3), gallium monochloride (GaCl), and O2 precursors on (0001) sapphire substrates, HVPE‐grown Ga2O3/Al2O3 and metal‐organic chemical vapor deposition (MOCVD)‐grown GaN/Al2O3 templates. The HVPE growth of phase pure In2O3 and (InGa)2O3 with corundum structure is reported for the first time.
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