Abstract
The reaction between hafnium tetrachloride and neopentyl alcohol in the presence of ammonia lead to hafnium oxoneopentoxide ( 1). 1 was characterized by FT-IR, 1H and 13C NMR. Single-crystal X-ray diffraction identified it as a trinuclear oxo species Hf 3(μ 3-O)(μ 3-ONep)(μ-ONep) 3(ONep) 6. The oxoneopentoxide has been used as precursor for the growth of HfO 2 films by pulsed liquid injection MOCVD. The influence of deposition temperature (320–750°C) on film growth rate, roughness and microstructure was studied and compared with the conventional Hf(thd) 4 (thd=2,2,6,6-tetramethyl-3,5-heptanedionate) precursor. Depending on the deposition temperature, amorphous, polycrystalline or epitaxial films can be obtained on sapphire ( R-plane) substrates. The film growth rate was independent of the deposition temperature in the range 350–750°C.
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