Abstract
The influence of deposition conditions (pressure, growth rate, solution concentration, etc.) on the growth of ferroelectric PbTiO 3 films by pulsed liquid injection MOCVD was examined. Pb(thd) 2 and Ti(O iPr) 2(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) dissolved in toluene were used as precursors. Films were grown on LaAlO 3 (001) substrates for deposition process optimisation. PbTiO 3/La 1 − x Sr x MnO 3/LaAlO 3 heterostructures were elaborated at optimized deposition conditions. The microstructure of the heterostructures was characterized by X-ray Diffraction and by Raman spectroscopy. Pt/PbTiO 3/La 1 − x Sr x MnO 3/LaAlO 3 structures were used for ferroelectric, dielectric and piezoelectric characterisations of PbTiO 3 films.
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