Abstract
The physical and electrical properties of hafnium oxide (HfO 2) thin films deposited by high pressure reactive sputtering (HPRS) have been studied as a function of the Ar/O 2 ratio in the sputtering gas mixture. Transmission electron microscopy shows that the HfO 2 films are polycrystalline, except the films deposited in pure Ar, which are amorphous. According to heavy ion elastic recoil detection analysis, the films deposited without using O 2 are stoichiometric, which means that the composition of the HfO 2 target is conserved in the deposition films. The use of O 2 for reactive sputtering results in slightly oxygen-rich films. Metal-Oxide-Semiconductor (MOS) devices were fabricated to determine the deposited HfO 2 dielectric constant and the trap density at the HfO 2/Si interface ( D it) using the high–low frequency capacitance method. Poor capacitance–voltage ( CV) characteristics and high values of D it are observed in the polycrystalline HfO 2 films. However, a great improvement of the electrical properties was observed in the amorphous HfO 2 films, showing dielectric constant values close to 17 and a minimum D it of 2×10 11 eV −1 cm −2.
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