H2S-treated GaP(001) surface studied by low-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy

Abstract

The GaP(001) surface treated by H2S has been studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS). We, for the first time, find the new surface structure, S/GaP(001)-(1×2), obtained by H2S treatment at 450 °C. The coverage of sulfur is estimated to be half monolayer by AES measurement. XPS results indicate that only Ga—S bonds are formed on the surface.