H2O treatment-induced uniform NiOX interfacial layer boosting brightness and light-emitting efficiency of blue perovskite electroluminescence

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The reported NiO x interfacial layers in blue perovskite light-emitting diodes (PeLEDs) usually require high-temperature annealing and complex interface modification. Herein, we report a kind of uniform NiO x anode interfacial layer induced by H 2 O treatment, which effectively enhances the brightness and light-emitting efficiency of blue PeLEDs simultaneously. Compared to the as-prepared NiO x anode interfacial layer, H 2 O treatment renders uniform and pinhole-free NiO x morphology. The solution-processed perovskite blue emissive layer prepared atop the H 2 O-treated NiO x interfacial layer demonstrates enhanced photoluminescent property and superior morphology with low trap density. The blue PeLEDs employing H 2 O-treated NiO x as anode interfacial layer show a maximum luminance of 9052 cd/m 2 and a maximum external quantum efficiency (EQE) of 1.80%, whereas the control device based on the as-prepared NiO x anode interfacial layer merely exhibits a maximum luminance of 3850 cd/m 2 and an EQE of 0.88%, leading to about 135% and 104% increase in brightness and efficiency, respectively. The PeLEDs emit pure blue light with emission peak located at 482 nm and demonstrate superior spectral stability under different driving voltages and operating time. • High-brightness blue PeLEDs were fabricated using NiO x interfacial layer. • H 2 O-treated NiO x interfacial layer induces to form high-quality blue perovskite emissive layer. • The blue PeLEDs attain a maximum luminance of 9052 cd/m 2 and a maximum EQE of 1.80%. • The PeLEDs emit stable blue light with emission peak at 482 nm.