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Abstract
We introduce a new design of vertical fully depleted type of the polycrystalline silicon (polysilicon) on insulator thin film transistor (TFT). This new structure fabricated based on polysilicon is characterized by vertical channels, an H-shaped geometry and also a technology similar to classical silicon on insulator (SOI) one. In practice, the design corresponding to a FinFET one is close to multigate SOI MOSFET and thus requires less area than planar design. It allows increasing easily the channel width simultaneously to better control and reduction of channel length, leading to an increase of the average driven current and device densities. This paper describes the low temperature fabrication process of this new structure that is compatible with SOI or glass substrates. A first run involving simple plastics masks allowed electrical characterizations of the transistors, mainly output and transfer characteristics that are discussed, confirming the potentiality of such a structure.
Published Version
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