Abstract
The incorporation and depth distribution of hydrogen, after annealings in low pressure water vapor of Si0 2 films thermally grown in O 2 on SiC and on Si, are determined using nuclear reaction analyses. Water isotopically enriched simultaneously in deuterium ( 2 H or D) and in 18 O was used. While in Si0 2 /SiC, the amount of incorporated hydrogen increases continuously with temperature and with initial oxide thickness; in SiO 2 /Si, there is no such dependence. In SiO 2 /SiC, hydrogen profiling reveals its presence in the surface, bulk, and interface regions, whereas in SiO 2 /Si, hydrogen is observed only in near-surface regions of the oxide film.
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