Abstract
In this study, an improvement of device performance with high-pressure heavy water (D2O) vapor annealing in a hafnium oxide/silicon oxide gate dielectric stack is reported in comparison with dry and water vapor annealing. The injected heavy water vapors reduced the interface state density and bulk oxide traps in hafnium oxide without increasing the equivalent oxide thickness. Under low electrical field stress, this method showed the smallest flat band voltage shift due to the effective removal of pre-existing traps in the HfO2 layer. These significant improvements of the electrical properties can be explained by the different thermal desorption rate between deuterium and hydrogen.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
