Abstract
ABSTRACTGuided wave technology based on III–V compound semiconductor materials is important for optical signal processing, fiber communication and sensor applications. The provision of heterojunction and quantum well materials by LPE, MBE, and MOCVD have led to new concepts and techniques in tailoring the properties of discrete devices and optoelectronic integrated circuits. This paper discusses the electro-optical properties of heterojunction, quantum well, superlattice based on two novel effects, the Franz-Keldysh effect in bulk materials and the quantum confined Stark effect in semiconductor quantum wells. The electroabsorption and electrorefraction properties resulted from these effects are utilized in the realization of some waveguide modulators. Materials based on InGaAsP/InP heterojunctions, InGaAs/GaAs strained layer quantum wells and InGaAs/InP quantum wells will be emphasized.
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