Abstract
Compositionally graded buffers (CGBs) are essential components of high-efficiency III–V inverted metamorphic solar cells, and high-quality CGBs with low defect densities are a requirement for high device efficiencies. In this article, we use plan-view and cross-sectional cathodoluminescence spectrum imaging (CLSI) to investigate the effect of growth conditions on the microstructure of Al y Ga1- x - y In x As CGBs with x In > 0.30. CLSI reveals significant compositional fluctuation in these materials that correlates with the distribution of threading dislocations in the CGBs. Threading dislocations are observed to collect in regions between abrupt transitions in emission energy, implying that concomitant strain fluctuations in these regions restrict dislocation motion. Thus, the compositional fluctuation leads to elevated threading dislocation densities that degrade CGB quality. We also correlate compositional fluctuation in the CGB with compositional fluctuation in subsequently grown device layers. The effectiveness of specific growth conditions at suppressing compositional fluctuation and limiting threading dislocation density is evaluated. CGBs grown at high temperatures with high Al content exhibit the lowest defect densities. The use of a high V/III ratio suppresses compositional fluctuation and defect density. These insights lead directly to improvements in the efficiency of metamorphic Ga1- x In x As solar cells grown on Al y Ga1- x - y In x As CGBs.
Accepted Version
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call