Abstract

Reaction of ground-state Si + ( 2 P) with methylsilane (SiH 3 CH 3 ) is studied from thermal to 10-eV kinefic energy by using guided ion beam mass spectrometry. The major products at thermal energies are SiCH 3 + , Si 2 HCH 3 + , and, above 1 eV, SiH 2 CH 3 + . Labeling experiments involving 30 Si + provide additional mechanistic information that SiCH 3 + formed via three different mechanisms

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