Abstract
The experimental characterization of a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 μm), with an asymmetric waveguide structure, a 100 μm wide stripe, and a bulk active layer positioned very close to the p-cladding, is reported. An anti-reflection/high reflection coated laser with a stripe width of 100 μm exhibits a single-facet output power over 25 W at a pumping current amplitude of 100 A.
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