GSMBE grown In 0.49Ga 0.51P/(In)GaAs/GaAs high hole mobility transistor structures

Abstract

In this paper, we report novel In 0.49Ga 0.51P/(In)GaAs/GaAs high-hole mobility transistor structures with different p-channel and doping methods. Electrical and optical properties of the grown structures were investigated by Van der Pauw Hall measurement and low-temperature photoluminescence. The current–voltage characteristics were performed on field effect transistors with “T”-shaped gates. By using delta-doping technique, 2DHG densities of 2.78×10 12 and 1.02×10 12 cm −2 with mobility of 191 and 2831 cm 2/V s at 300 and 77 K for In 0.49Ga 0.51P/GaAs structures have been achieved. For In 0.49Ga 0.51P/In 0.2Ga 0.8As/GaAs structures, 2DHG densities increased to 2.84×10 12 and 1.29×10 12 cm −2 with mobility increasing to 208 and 2972 cm 2/V s at 300 and 77 K, respectively. Photoluminescence spectra of In 0.49Ga 0.51P/In 0.2Ga 0.8As/GaAs modulation doped heterostructure shows a peak located at 1.310 eV, which is attributed to a transition from V 3/2 band to conduction band. The processed high-hole mobility transistors have a maximum extrinsic transconductance of 35 mS/mm and a maximum saturation current of 57 mA/mm at 300 K.