Abstract
Undoped and Al-doped CsLiB6O10 (CLBO) crystals have been grown by top-seeded solution growth (TSSG) method using Cs2O–Li2O–MoO3 flux system. The thermophysical properties of undoped and Al-doped CLBO were systematically studied, including thermal expansion, specific heat, thermal diffusion and thermal conductivity. The measured thermal expansion coefficients of undoped and Al-doped CLBO in the temperature range of 30–500 °C are αa=1.81×10-5/°C, αc=-2.98×10-5/°C and αa=1.10×10-5/°C, αc=-2.56×10-5/°C, respectively, displaying much weaker anisotropy than those of widely used nonlinear optical crystals, such as β-BaB2O4 and CsB3O5. CLBO exhibits specific heat of 0.86–1.03 Jg-1K-1 in the temperature range from 30 to 500 °C. The thermal conductivities of undoped and Al-doped CLBO at 30 °C are respectively calculated to be κa=1.73 Wm-1K-1, κc=1.69 Wm-1K-1 and κa=1.74 Wm-1K-1, κc=1.49 Wm-1K-1, which are larger than those of β-BaB2O4. Dielectric properties were investigated in the temperature range of 20–400 °C within the frequency range of 100 Hz–1 MHz. The measured dielectric constants of undoped and Al-doped CLBO at 1 MHz and 25 °C are εa=5.27, εc=5.92 and εa=4.96 , εc=5.49, respectively. Additionally, undoped and Al-doped CLBO exhibit significantly low dielectric losses (0.005–0.016 at 1 MHz and 25 °C) and superior dielectric temperature stability (20–300 °C). These results indicate that undoped and Al-doped CLBO possess excellent thermophysical performance and could be two promising dielectric material candidates for high frequency device applications.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call