Abstract
LaNiO3 (LNO) perovskite oxide thin film nanostructure has been prepared using spin coating technique for its homogenous growth, and structural and electrical properties on quartz substrate. X-ray diffraction (XRD) confirmed standard cubic perovskite symmetry. Surface morphological measurements were carried out using atomic force microscope (AFM), which shows uniform, smooth, and crack free surface with RMS roughness of 7.08 nm. This oxide based conducting layer can act as an excellent conducting bottom/top electrode providing brilliant seeding or buffer layer for subsequent ferroelectric/ferromagnetic layers. This incorporates that it can act as an excellent conducting bottom electrode. I-V characteristics of LNO demonstrated a small shift in current with the application of low perpendicular magnetic field of 0.58T. p-type conduction. Average hole concentration of 3.66 x 10+17 cm-2 was estimated from the Hall effect measurements. The magnetoresistance (MR) of the sample was found to be +48.26%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
