Abstract
The effects of total gas flow rate and transport rate of source materials on the growth rate of ZnTe layers grown on the (1 0 0) ZnTe substrates by atmospheric pressure metal organic vapor phase epitaxy have been investigated. The growth rate increases with the square root of the gas flow rate and then it deviates from this tendency with increasing total gas flow rate. The growth rate shows a sublinear increase with increasing the transport rate of the II or VI group source. From the results of photoluminescence property, it is found that epitaxial layers of good quality can be obtained under the growth regime in between mass transport and surface kinetic reaction ones.
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